Cypress Semiconductor CY7C1231H Manuel d'utilisateur télécharger pdf (Page 12)

CY7C1231H

Document #: 001-00207 Rev. *B Page 12 of 12

Document History Page

Document Title: CY7C1231H 2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture

Document Number: 001-00207

REV. ECN NO. Issue Date

Orig. of

Change Description of Change

** 347377 See ECN PCI New Data Sheet

*A 428408 See ECN NXR Converted from Preliminary to Final.

Changed address of Cypress Semiconductor Corporation on Page# 1 from

“3901 North First Street” to “198 Champion Court”

Removed 100 MHz Speed-bin

Changed Three-State to Tri-State.

Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the

Electrical Characteristics Table.

Modified test condition from V

DDQ

< V

DDQ

< V

Replaced Package Name column with Package Diagram in the Ordering

Information table.

Updated the Ordering Information Table.

Replaced Package Diagram of 51-85050 from *A to *B

*B 459347 See ECN NXR Included 2.5V I/O option

Updated the Ordering Information table.

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Cypress Semiconductor CY7C1231H Manuel d'utilisateur Page 12