Cypress Semiconductor CY14B101K Spécifications Page 16

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CY14B101K
Document Number: 001-06401 Rev. *J Page 16 of 29
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
CC
Relative to GND ..........–0.5V to 4.1V
Voltage Applied to Outputs
in High Z State....................................... –0.5V to V
CC
+ 0.5V
Input Voltage...........................................–0.5V to Vcc + 0.5V
Transient Voltage (<20 ns) on
Any Pin to Ground Potential .................. –2.0V to V
CC
+ 2.0V
Package Power Dissipation
Capability (T
A
= 25°C) ................................................... 1.0W
Surface Mount Pb Soldering
Temperature (3 Seconds).......................................... +260°C
DC Output Current (1 output at a time, 1s duration) ... 15 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch Up Current ................................................... > 200 mA
Operating Range
Range Ambient Temperature V
CC
Commercial 0°C to +70°C 2.7V to 3.6V
Industrial –40°C to +85°C
DC Electrical Characteristics
Over the Operating Range (VCC = 2.7V to 3.6V)
[8, 9]
Parameter Description Test Conditions Min Max Unit
I
CC1
Average V
CC
Current t
RC
= 25 ns
t
RC
= 35 ns
t
RC
= 45 ns
Dependent on output loading and cycle
rate. Values obtained without output
loads.
I
OUT
= 0 mA.
Commercial 65
55
50
mA
mA
Industrial 70
60
55
mA
mA
I
CC2
Average V
CC
Current
during STORE
All Inputs Do Not Care, V
CC
= Max
Average current for duration t
STORE
6mA
I
CC3
Average V
CC
Current at
t
AVAV
= 200 ns, 3V, 25°C
Typical
WE
> (V
CC
– 0.2V). All other inputs cycling.
Dependent on output loading and cycle rate.
Values obtained without output loads.
10 mA
I
CC4
Average V
CAP
Current
during AutoStore Cycle
All Inputs Do Not Care, V
CC
= Max
Average current for duration t
STORE
3mA
I
SB
V
CC
Standby Current WE > (V
CC
– 0.2V). All others V
IN
< 0.2V or
>
(V
CC
–0.2V). Standby current level after nonvolatile
cycle is complete. Inputs are static. f = 0 MHz
3mA
I
IX
Input Leakage Current V
CC
= Max, V
SS
< V
IN
< V
CC
–1 +1 μA
I
OZ
Off State Output Leakage
Current
V
CC
= Max, V
SS
< V
IN
< V
CC
, CE or OE > V
IH
–1 +1 μA
V
IH
[10]
Input HIGH Voltage 2.0 V
CC
+ 0.5 V
V
IL
Input LOW Voltage V
SS
– 0.5 0.8 V
V
OH
Output HIGH Voltage I
OUT
= –2 mA 2.4 V
V
OL
Output LOW Voltage I
OUT
= 4 mA 0.4 V
V
CAP
Storage Capacitor Between V
CAP
pin and V
SS
, 5V rated 17 120 μF
Notes
8. The HSB
pin has I
OUT
= –10 μA for V
OH
of 2.4 V, this parameter is characterized but not tested.
9. The INT pin is open drain and does not source or sink current when interrupt register bit D3 is low.
10. V
IH
changes by 100 mV when V
CC
> 3.5V.
Not Recommended for New Designs
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